IPD90P04P4L04ATMA1 Trans MOSFET P-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R
- Mã sản phẩm: IPD90P04P4L04ATMA1
- Nhà sản xuất: Infineon Technologies AG
- Website hỗ trợ: https://www.proe.vn
45.000₫
Trans MOSFET P-CH 40V 90A Automotive 3-Pin(2+Tab) DPAK T/R
As an alternative to traditional transistors, the IPD90P04P4L04ATMA1 power MOSFET from Infineon Technologies can be used to both amplify and switch electronic signals. Its maximum power dissipation is 125000 mW. This product will be shipped in tape and reel packaging to allow for quick mounting and safe delivery. This device utilizes optimos technology. This P channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 175 °C.
Product Technical Specifications
| EU RoHS | Compliant with Exemption |
| ECCN (US) | EAR99 |
| Part Status | NRND |
| HTS | 8541.29.00.95 |
| Tab | Tab |
| Package Height | 2.3 |
| Package Width | 6.22 |
| Package Length | 6.5 |
| Mounting | Surface Mount |
| PCB changed | 2 |
| Product Category | Power MOSFET |
| Configuration | Single |
| Channel Mode | Enhancement |
| Channel Type | P |
| Number of Elements per Chip | 1 |
| Maximum Drain Source Voltage (V) | 40 |
| Maximum Gate Source Voltage (V) | ±16 |
| Maximum Continuous Drain Current (A) | 90 |
| Maximum Drain Source Resistance (mOhm) | 4.3@10V |
| Typical Gate Charge @ Vgs (nC) | 135@10V |
| Typical Gate Charge @ 10V (nC) | 135 |
| Typical Input Capacitance @ Vds (pF) | 8900@25V |
| Maximum Power Dissipation (mW) | 125000 |
| Typical Fall Time (ns) | 60 |
| Typical Rise Time (ns) | 20 |
| Typical Turn-Off Delay Time (ns) | 140 |
| Typical Turn-On Delay Time (ns) | 20 |
| Minimum Operating Temperature (°C) | -55 |
| Maximum Operating Temperature (°C) | 175 |
| Packaging | Tape and Reel |
| Supplier Temperature Grade | Automotive |
| Automotive | Yes |
| AEC Qualified Number | AEC-Q101 |
| Supplier Package | DPAK |
| Standard Package Name | TO-252 |
| Pin Count | 3 |
| Military | No |
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